Part number:
TA4016AFE
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
122.45 KB
Description:
Uhf wide band amplifier applications
TA4016AFE Datasheet (122.45 KB)
TA4016AFE
Toshiba ↗ Semiconductor
122.45 KB
Uhf wide band amplifier applications
* Low current: ICC = 6 mA
* Wide band: f = 3.2 GHz (3dB down)
* Operating supply voltage: VCC = 1.8~3.2 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Supply voltage Total power dissipation Operating temperature Storage temperature VCC PD (Note 1) Topr Tstg 3.6 300 -4
📁 Related Datasheet
TA4011AFE - UHF Wide-Band Amplifier
(Toshiba Semiconductor)
TA4011AFE
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4011AFE
UHF Wide Band Amplifier Applications
Features
• Low current: ICC = 3..
TA4011F - UHF WIDE BAND AMPLIFIER APPLICATIONS
(Toshiba Semiconductor)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4011F
UHF Wide Band Amplifier Applications
Features
· Low current: ICC = 3.5 mA · Wide .
TA4011FU - UHF WIDE BAND AMPLIFIER APPLICATIONS
(Toshiba Semiconductor)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4011FU
UHF Wide Band Amplifier Applications
TA4011FU
Features
l Low current: ICC = 3..
TA4012AFE - TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
(Toshiba Semiconductor)
TA4012AFE
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012AFE
UHF Wide Band Amplifier Applications Features
· · · Low current: ICC.
TA4012F - UHF WIDE BAND AMPLIFIER APPLICATIONS
(Toshiba Semiconductor)
.
TA4012FU - UHF WIDE-BAND AMPLIFIER
(Toshiba Semiconductor)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012FU
UHF Wide Band Amplifier Applications
TA4012FU
Features
z Low current: ICC = 6..