Datasheet4U Logo Datasheet4U.com

TA4016AFE

UHF WIDE BAND AMPLIFIER APPLICATIONS

TA4016AFE Datasheet (122.45 KB)

Preview of TA4016AFE PDF Datasheet

Datasheet Details

Part number:

TA4016AFE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

122.45 KB

Description:

Uhf wide band amplifier applications

TA4016AFE Features

* Low current: ICC = 6 mA

* Wide band: f = 3.2 GHz (3dB down)

* Operating supply voltage: VCC = 1.8~3.2 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Supply voltage Total power dissipation Operating temperature Storage temperature VCC PD (Note 1) Topr Tstg 3.6 300 -4

📁 Related Datasheet

TA4011AFE - UHF Wide-Band Amplifier (Toshiba Semiconductor)
TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3..

TA4011F - UHF WIDE BAND AMPLIFIER APPLICATIONS (Toshiba Semiconductor)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011F UHF Wide Band Amplifier Applications Features · Low current: ICC = 3.5 mA · Wide .

TA4011FU - UHF WIDE BAND AMPLIFIER APPLICATIONS (Toshiba Semiconductor)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications TA4011FU Features l Low current: ICC = 3..

TA4012AFE - TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic (Toshiba Semiconductor)
TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC.

TA4012F - UHF WIDE BAND AMPLIFIER APPLICATIONS (Toshiba Semiconductor)
.

TA4012FU - UHF WIDE-BAND AMPLIFIER (Toshiba Semiconductor)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Features z Low current: ICC = 6..

TAGS

TA4016AFE UHF WIDE BAND AMPLIFIER APPLICATIONS Toshiba Semiconductor

Image Gallery

TA4016AFE Datasheet Preview Page 2 TA4016AFE Datasheet Preview Page 3

TA4016AFE Distributor