TB2905HQ Datasheet - Toshiba Semiconductor

TB2905HQ, Low-Frequency Power Amplifier IC

TB2905HQ TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2905HQ Class KB High-Efficiency, Low-Frequency Power Amplifier IC Maximum Po.
(Each description applies to a single channel) 1.

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Datasheet Details

Part number:

TB2905HQ

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

323.21 KB

Description:

Low-Frequency Power Amplifier IC

Features

* High output power : POUT MAX (1) = 47 W (typ. ) (VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT MAX (2) = 43 W (typ. ) (VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT Pout MAX (3) = 80 W (typ. ) (VCC = 14.4V, f = 1 kHz, JEITA max, RL = 2 Ω) : POUT (1) = 29 W (typ. ) (VCC = 14.4 V,

Applications

* that incorporates four BTL amplifier channels. It employs a pure complementary DMOS output stage www. DataSheet4U. com consisting of P-ch upper and N-ch lower sections, offering a maximum output power (POUT) of 47 W. Class KB (keyed BTL) amplifiers exhibit less than half the heat generation of compara

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TB2905HQ Low-Frequency Power Amplifier Toshiba Semiconductor

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