TC55257BFL Datasheet, Ram, Toshiba Semiconductor

✔ TC55257BFL Features

with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the stand

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TC55257BFL

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Toshiba ↗ Semiconductor

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📄 Datasheet

Description:

Silicon gate cmos static ram. The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V po

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Toshiba America Electronic Components

32K X 8 STANDARD SRAM, 100 ns, PDSO28

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TC55257BFL-10L

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Unit Price : $10

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TC55257BFL SILICON GATE CMOS STATIC RAM Toshiba Semiconductor