TC55VBM316AFTN Datasheet - Toshiba Semiconductor

TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology pr.

TC55VBM316AFTN Features

* Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and output

TC55VBM316AFTN Datasheet (258.28 KB)