TC55VBM316AFTN Datasheet, Cmos, Toshiba Semiconductor

TC55VBM316AFTN Features

• Cmos
• Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features

PDF File Details

Part number:

TC55VBM316AFTN

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.28kb

Download:

📄 Datasheet

Description:

Mos digital integrated circuit silicon gate cmos. The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words b

TC55VBM316AFTN Application

• Applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
• 40°

TAGS

TC55VBM316AFTN

Toshiba Semiconductor

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