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TC55VBM316AFTN

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55VBM316AFTN Features

* Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and output

TC55VBM316AFTN General Description

The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology pr.

TC55VBM316AFTN Datasheet (258.28 KB)

Preview of TC55VBM316AFTN PDF

Datasheet Details

Part number:

TC55VBM316AFTN

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.28 KB

Description:

Mos digital integrated circuit silicon gate cmos.
TC55VBM316AFTN/ASTN40,55 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WO.

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TAGS

TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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