TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

Description

TC55VBM316AFTN/ASTN40,55 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WO.
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits.

📥 Download Datasheet

TC55VBM316AFTN Datasheet Preview — Preview of TC55VBM316AFTN PDF

Datasheet Specifications

Part number: TC55VBM316AFTN
Manufacturer: Toshiba ↗ Semiconductor
File Size: 258.28 KB
Datasheet: TC55VBM316AFTN_ToshibaSemiconductor.pdf
Description: MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Features

* Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and output

Applications

* where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
* 40° to 85°C, the TC55VBM316AFTN/ASTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM316AFTN/ASTN is available in a plastic 48-pin thi

TC55VBM316AFTN Distributors

📁 Related Datasheet

TC55V020FT TC55V020TR TC55V040AFT TC55V040ATR TC55V040FT TC55V040TR

📌 All Tags

TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

Toshiba Semiconductor TC55VBM316AFTN-like datasheet