Datasheet4U Logo Datasheet4U.com

TC55VBM316AFTN MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55VBM316AFTN Description

TC55VBM316AFTN/ASTN40,55 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WO.
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits.

TC55VBM316AFTN Features

* Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and output

TC55VBM316AFTN Applications

* where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
* 40° to 85°C, the TC55VBM316AFTN/ASTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM316AFTN/ASTN is available in a plastic 48-pin thi

📥 Download Datasheet

Preview of TC55VBM316AFTN PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TC55V020FT - (TC55V020FT/TR) 8-Bit FULL CMOS SRAM (Toshiba)
  • TC55V020TR - (TC55V020FT/TR) 8-Bit FULL CMOS SRAM (Toshiba)
  • TC55V040AFT - 8-Bit FULL CMOS SRAM (Toshiba)
  • TC55V040ATR - (TC55V040ATR/AFT) 8-Bit FULL CMOS SRAM (Toshiba)
  • TC55V040FT - (TC55V040FT/TR) 8-Bit FULL CMOS SRAM (Toshiba)
  • TC55V040TR - (TC55V040FT/TR) 8-Bit FULL CMOS SRAM (Toshiba)
  • TC55V1001A - (TC55V1001Axx) 8-Bit CMOS SRAM (Toshiba)
  • TC55V1001AF - (TC55V1001Axx) 8-Bit CMOS SRAM (Toshiba)

📌 All Tags

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor
Toshiba Semiconductor TC55VBM316AFTN-like datasheet