TC55VZM216AJJN Datasheet (Toshiba Semiconductor)

TC55VZM216AJJN, 16-BIT CMOS STATIC RAM

The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Chip enable ( CE ) can be used to plac

TC55VZM216AJJN Features

* Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns Low-power dissipation (IDDO2) (the following are maximum values) Cycle Time Operation (max) 8 140 10 130 12 120 ns mA