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TG2006F Datasheet - Toshiba Semiconductor

TG2006F, 1.9 GHz Band Power Amplifier

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication .
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TG2006F_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TG2006F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

174.34 KB

Description:

1.9 GHz Band Power Amplifier

Features

* l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ. ) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.02 g (typ. ) Maximum Ratings (Ta = 25°C) Character

Applications

* for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various o

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