TJ30S06M3L Datasheet, Mosfet, Toshiba Semiconductor

TJ30S06M3L Features

• Mosfet (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth =

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Part number:

TJ30S06M3L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

255.36kb

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📄 Datasheet

Description:

P-channel mosfet.

TJ30S06M3L Application

• Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators 2. Features (1) AEC-Q101

TAGS

TJ30S06M3L

Toshiba Semiconductor

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