* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ30S06M3L DPAK+ 1: Gate 2: Drain (he
TJ30S06M3L Datasheet (255.36 KB)
TJ30S06M3L
Toshiba ↗ Semiconductor
255.36 KB
P-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ30S06M3L
1. Applications
* Automotive
* Motor Drivers
* DC-DC Converters
* Sw.
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