TJ30S06M3L P-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon P-Channel MOS (U-MOS) TJ30S06M3L 1.Applications * Automotive * Motor Drivers * DC-DC Converters * Sw.

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Datasheet Specifications

Part number: TJ30S06M3L
Manufacturer: Toshiba ↗ Semiconductor
File Size: 255.36 KB
Datasheet: TJ30S06M3L-ToshibaSemiconductor.pdf
Description: P-Channel MOSFET

Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ30S06M3L DPAK+ 1: Gate 2: Drain (he

Applications

* Automotive
* Motor Drivers
* DC-DC Converters

TJ30S06M3L Distributors

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TJ30S06M3L P-Channel MOSFET Toshiba Semiconductor

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