* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SIS 4. Absolute
TJ70A06J3 Datasheet (229.34 KB)
TJ70A06J3
Toshiba ↗ Semiconductor
229.34 KB
Mosfets.
TJ70A06J3
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ70A06J3
1. Applications
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* Relay Drivers DC-DC Converters Motor Drivers.
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