TJ70A06J3 Datasheet - Toshiba Semiconductor

TJ70A06J3, MOSFETs

TJ70A06J3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ70A06J3 1.Applications * * * Relay Drivers DC-DC Converters Motor Drivers.

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SIS 4. Absolute

TJ70A06J3-ToshibaSemiconductor.pdf