TJ9A10M3 - MOSFETs

Toshiba Semiconductor

Datasheet Details

Part number	TJ9A10M3
Manufacturer	Toshiba ↗ Semiconductor
File Size	199.10 KB
Description	MOSFETs
Datasheet	TJ9A10M3-ToshibaSemiconductor.pdf

(1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (.

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Published: Sep 11, 2014 |