TJ9A10M3 Datasheet, Mosfets, Toshiba Semiconductor

TJ9A10M3 Features

• Mosfets (1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit 1: Gate 2: Dra

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Part number:

TJ9A10M3

Manufacturer:

Toshiba ↗ Semiconductor

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199.10kb

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📄 Datasheet

Description:

Mosfets.

TJ9A10M3 Application

• Applications
• Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) 2. Features (1) (2) (3)

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