TK150E09NE Datasheet - Toshiba Semiconductor

TK150E09NE MOSFET

TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅧ-H) TK150E09NE E-Bike Low drain source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current : IDSS = 10 μA (max) (VDS = 85 V) Enhancement mode : Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA) 10.2±0.3 Φ3.7±0.1 A 2.74 6.51 Unit: mm 1.27±0.1 8.59±0.2 15.1±0.8 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate .

TK150E09NE-ToshibaSemiconductor.pdf