• Part: TPCA8109
  • Description: Silicon P Channel MOS Type
  • Manufacturer: Toshiba
  • Size: 293.11 KB
TPCA8109 Datasheet (PDF) Download
Toshiba
TPCA8109

Key Features

  • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5mA)
  • Small footprint due to small and thin package