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TPCA8109 - Silicon P Channel MOS Type

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Datasheet Details

Part number TPCA8109
Manufacturer Toshiba Semiconductor
File Size 293.11 KB
Description Silicon P Channel MOS Type
Datasheet download datasheet TPCA8109 Datasheet
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Full PDF Text Transcription

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TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications 8 Unit: mm 1.27 0.4 ± 0.1 5 0.05 M A • • • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) 6.0 ± 0.3 5.0 ± 0.2 • Small footprint due to small and thin package 0.15 ± 0.05 1 0.95 ± 0.05 4 0.595 0.166 ± 0.05 4 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −24 −72 30 2.8 Unit 5.0 ± 0.2 V V V A W W 8 5 0.6 ± 0.
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