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TVR4N Datasheet - Toshiba Semiconductor

TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type. Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V.

TVR4N_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TVR4N

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

120.00 KB

Description:

Toshiba fast recovery diode silicon diffused type high speed rectifier applications (fast recovery).

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TVR4N TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications fast recovery Toshiba Semiconductor