01BZA8.2 Datasheet, Diode, Toshiba

PDF File Details

Part number:

01BZA8.2

Manufacturer:

Toshiba ↗

File Size:

88.19kb

Download:

📄 Datasheet

Description:

Diode.

Datasheet Preview: 01BZA8.2 📥 Download PDF (88.19kb)
Page 2 of 01BZA8.2

TAGS

01BZA8.2
Diode
Toshiba

📁 Related Datasheet

0105-50 - RF Transistor (GHz TECHNOLOGY)
0105-50 50 Watts, 28 Volts, Class AB Def 100 - 500 MHz GENERAL DESCRIPTION The 0105-50 is a double input matched COMMON EMITTER broadband transist.

010NE2LS - MOSFET (Infineon)
BSC010NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V.

011N40P1 - KHB011N40P1 (KEC)
.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E .

012N08N5 - MOSFET (Infineon)
IPT012N08N5 MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) .

01304C6 - MOSFET (Infineon)
IQE013N04LM6CG MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% a.

014400J1 - IBM014400J1 (IBM Microelectronics)
.. .. .. .. .. .. .. .

014N04LS - MOSFET (Infineon)
BSC014N04LS MOSFET OptiMOSTM Power-MOSFET, 40 V Features • Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% aval.

014N06SC - MOSFET (Infineon)
BSC014N06NSSC MOSFET OptiMOSTM Power-Transistor, 60 V Features • Double side cooled package-with lowest Junction-top thermal resistance • 175°C rated.

0150SC-1250M - Silicon Carbide SIT (Microsemi)
0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The .

0154003.DR - 154 Series Very Fast Acting Fuses (ETC)
.. .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts