15J331 Datasheet - Toshiba

15J331 Silicon N-Channel IGBT

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High-Power Switching Applications Motor Control Applications Fourth-generation IGBT Enhancement mode type High speed: tf = 0.10 μs (typ.) Low saturation voltage: VCE (sat) = 1.75 V (typ.) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector .

15J331 Datasheet (219.13 KB)