15J331 Silicon N-Channel IGBT

Toshiba

Description

GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High-Power Switching Applications Motor Control Applications .

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Datasheet Specifications

Part number: 15J331
Manufacturer: Toshiba ↗
File Size: 219.13 KB
Datasheet: 15J331-Toshiba.pdf
Description: Silicon N-Channel IGBT

Applications

* Motor Control Applications
* Fourth-generation IGBT
* Enhancement mode type
* High speed: tf = 0.10 μs (typ. )
* Low saturation voltage: VCE (sat) = 1.75 V (typ. )
* FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristi

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15J331 Silicon N-Channel IGBT Toshiba

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