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1ZB100 - SILICON DIFFUSED TYPE ZENER DIODE

This page provides the datasheet information for the 1ZB100, a member of the 1ZB6.8 SILICON DIFFUSED TYPE ZENER DIODE family.

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Datasheet Details

Part number 1ZB100
Manufacturer Toshiba
File Size 131.38 KB
Description SILICON DIFFUSED TYPE ZENER DIODE
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Full PDF Text Transcription

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1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Dissipation l Peak Reverse Power Dissipation l Zener Voltage l Tolerance of Zener Voltage l Plastic Mold Package : P = 1.0W : PRSM = 200W at tw = 200µs : VZ = 6.8~390V : ±10% MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL P Tj Tstg RATING 1.0 −40~150 −40~150 UNIT W °C °C MARK JEDEC JEITA TOSHIBA Weight: 0.18g ― ― 3−3F2A 1 2001-07-09 1ZB6.8~1ZB390 ELECTRICAL CHARACTERISTICS (Ta = 25°C) TYPE 1ZB6.8 1ZB7.5 1ZB8.2 1ZB9.
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