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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. FEATURES
• Large Collector Current and Collector Power Dissipation Capability. (P C=2.0W at Ta=25°C)
. Complementary to 2SA1195
Unit in mm
^9.9MAX. 0Z.Z ±0.2
S
S38KS
a7 6
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL V,CBO VcEO v EBO ic IB PC
Tsti
RATING UNIT 160 V 160
1.5 0.5 2.0
15 150 °C
-55^150 °C
"rt^
3°
1. BASE 2. COLLECTOR
(COLLECTOR connected to tab)
3. EMITTER
EDEC
T -2 2
EIAJ
TOSHIBA
Weight : l.
2SC2483 Datasheet
