2SK3880
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Silicon n-channel mosfet.
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2SK3880 - N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor
2SK3880
FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-R.
2SK3882-01 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3882-01
FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source O.
2SK3886-01MR - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3886-01MR
FEATURES ·Drain Current : ID= 67A@ TC=25℃ ·Drain Source Voltage
: VDSS= 120V(Min) ·Static Drain-Source .
2SK3887-01 - N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor
2SK3887-01
FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source O.
2SK3887-01 - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
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2SK3888-01MR - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
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2SK3889-01L - Power MOSFET
(Fuji Semiconductors)
2SK3889-01L,S,SJ om
N-CHANNEL SILICON POWER MOSFET
e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low dr.
2SK3889-01S - Power MOSFET
(Fuji Semiconductors)
2SK3889-01L,S,SJ om
N-CHANNEL SILICON POWER MOSFET
e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low dr.
2SK3889-01SJ - Power MOSFET
(Fuji Semiconductors)
2SK3889-01L,S,SJ om
N-CHANNEL SILICON POWER MOSFET
e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low dr.
