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50JR22 Datasheet - Toshiba

50JR22 Silicon N-Channel IGBT

50JR22 Features

* (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC

50JR22-Toshiba.pdf

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Datasheet Details

Part number:

50JR22

Manufacturer:

Toshiba ↗

File Size:

201.59 KB

Description:

Silicon n-channel igbt.

50JR22 Distributor

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50JR22 50JR22 Silicon N-Channel IGBT Toshiba