A1887 Datasheet - Toshiba

A1887 2SA1887

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) at IC = 5 A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rati.

A1887-Toshiba.pdf