TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Low collector-emitter saturation : VCE(sat) = 1.0 V（max） 2SA2183 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC Pulse IC ICP 5.0 8.0 A A Base current IB 0.5 A Co
Datasheet Details
Part number:
A2183
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Description:
Silicon pnp epitaxial type transistor.