BU208 Datasheet - Toshiba

BU208 Silicon NPN Transistor

BU208 Features

* . High Voltage : V CES =1500V . Low Saturation Voltage : Vc E ( sa t)=5V (Max.)

* Fall Time

* tf=0.7^s (Typ.) . Glass Passivated Base-Collector Junction MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak

BU208-Toshiba.pdf

BU208 Datasheet Preview — Preview of BU208 PDF

Datasheet Details

Part number:

BU208

Manufacturer:

Toshiba ↗

File Size:

80.64 KB

Description:

Silicon npn transistor.

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