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C4118 - 2SC4118

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC4118 Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1588 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature PC 100 mW JEDEC ― Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEITA SC-70 Note: Using continuously under heavy loads (e.g.