C5111 Datasheet - Toshiba

C5111 2SC5111

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 30 60 100 125 55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e..

C5111 Datasheet (331.87 KB)