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C5906 Datasheet - Toshiba

C5906 - Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage

C5906-Toshiba.pdf

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Datasheet Details

Part number:

C5906

Manufacturer:

Toshiba ↗

File Size:

164.60 KB

Description:

Silicon npn transistor.

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