C5906 Datasheet - Toshiba

C5906 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage .

C5906 Datasheet (164.60 KB)