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CES388 Schottky Barrier Diode

CES388 Description

Schottky Barrier Diode Silicon Epitaxial CES388 1.Applications * High-Speed Switching 2..

CES388 Features

* (1) Low forward voltage : VF(3) = 0.54 V (typ). (2) Low reverse current : IR(1) = 1 µA (max). (3) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit CES388 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specifi

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Schottky Barrier Diode Toshiba
Toshiba CES388-like datasheet