HN1B01FU Datasheet | Toshiba

Features (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 m A (max) (3) High h FE: h FE = 120 to 400 (4) Excellent h FE linearity: h FE (IC = -0.1 m A)/h FE (IC = -2 m A) = 0.95 (typ.) 3. Q2 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 m A (max) (3) High h FE: h FE = 120 to 400 (4) Excellent h FE linearity: h FE (IC = 0.1 m A)/h FE (IC = 2 m A) = 0.95 (typ.) 4. Q1, Q2 mon Features (1) AEC-Q101 qualified (Please see the orderable part number list) 5. Packaging and Internal Circuit US6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021-2022 Toshiba Electronic Devices & Storage Corporation Start of mercial production 1991-01 2022-03-11 Rev.3.0 6. Orderable part number Orderable part number AEC-Q101 Note HN1B01FU-Y HN1B01FU-Y,LF - General Use HN1B01FU-Y,LXGF (Note 1) Unintended Use HN1B01FU-GR HN1B01FU-Y,LXHF HN1B01FU-GR,LF - Automotive Use General Use HN1B01FU-GR,LXGF (Note 1) Unintended Use HN1B01FU-GR,LXHF Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 7. Q1 Absolute Maximum Ratings (Unless otherwise specified, Ta = 25- ) (Note 1) (Note 1) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base...