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HN1B01FU Datasheet - Toshiba

HN1B01FU Silicon PNP/NPN Epitaxial Type Transistor

HN1B01FU Features

* (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 3. Q2 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 1

HN1B01FU-Toshiba.pdf

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Datasheet Details

Part number:

HN1B01FU

Manufacturer:

Toshiba ↗

File Size:

597.33 KB

Description:

Silicon pnp/npn epitaxial type transistor.

HN1B01FU Distributor

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HN1B01FU HN1B01FU Silicon PNP NPN Epitaxial Type Transistor Toshiba