HN2S01FU Datasheet - Toshiba

HN2S01FU, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Low Voltage High Speed Switching Application HN2S01FU Unit: mm z HN2S01FU is composed.

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Datasheet Details

Part number:

HN2S01FU

Manufacturer:

Toshiba ↗

File Size:

201.76 KB

Description:

Silicon Epitaxial Schottky Barrier Type Diode

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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HN2S01FU Silicon Epitaxial Schottky Barrier Type Diode Toshiba

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