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HN3C56FU - Silicon NPN Epitaxial Type Transistor

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Part number HN3C56FU
Manufacturer Toshiba
File Size 235.78 KB
Description Silicon NPN Epitaxial Type Transistor
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HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity : VCEO = 50V, IC = 150mA (max) : hFE = 120 to 400 : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCEO VEBO IC IB PC* 50 V 5 V 150 mA 30 mA 200 mW 1.COLLECTOR1 (C1) 2.EMITTER1 (E2) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.
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