HN4A08J Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage.
HN4A08J Datasheet
| Part number | HN4A08J |
|---|---|
| Download | HN4A08J Datasheet (PDF) |
| File Size | 223.97 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
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