HN4A08J
HN4A08J is Silicon PNP Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Low Frequency Power Amplifer Applications Power Switching Application
Unit: mm z High DC Current Gain : h FE = 100 to 320 z Low Saturation Voltage : VCE(sat) =
- 0.4V (max)
(IC =
- 500m A , IB =
- 20m A)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 30
Collector-emitter voltage
VCEO
- 25
Emitter-base voltage
VEBO
- 5
Collector current
- 800 m A
Base current
- 160 m A
Collector power dissipation Junction temperature Storage temperature range
PC-
300 m W
Tj
°C
Tstg
- 55 to...
