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HN4A08J Datasheet - Toshiba

HN4A08J-Toshiba.pdf

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Datasheet Details

Part number:

HN4A08J

Manufacturer:

Toshiba ↗

File Size:

223.97 KB

Description:

Silicon pnp epitaxial type transistor.

HN4A08J, Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage : VCE(sat) = 0.4V (max) (IC = 500mA , IB = 20mA) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-ba

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