K20E60U Datasheet, Mosfet, Toshiba

K20E60U Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 12 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enh

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Part number:

K20E60U

Manufacturer:

Toshiba ↗

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269.01kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

K20E60U Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) (2) High forward transf

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K20E60U

Toshiba

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