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K20E60U Datasheet - Toshiba

K20E60U Silicon N-Channel MOSFET

K20E60U Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 12 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20E60U 1: Gate (G)

K20E60U Datasheet (269.01 KB)

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Datasheet Details

Part number:

K20E60U

Manufacturer:

Toshiba ↗

File Size:

269.01 KB

Description:

Silicon n-channel mosfet.

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K20E60U Silicon N-Channel MOSFET Toshiba

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