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K20E60U Silicon N-Channel MOSFET

K20E60U Description

MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1.Applications * Switching Voltage Regulators 2..

K20E60U Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 12 S (typ. ) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20E60U 1: Gate (G)

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Silicon N-Channel MOSFET Toshiba
Toshiba K20E60U-like datasheet