K20E60U - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 12 S (typ. ) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20E60U 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-so.

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Published: Jan 25, 2017 |