K2717
Key Features
- IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dIDR / dt = 100 A / µs
- 45 - - 25 - nC - 20
- Part: K2717
- Description: Silicon N Channel MOS Type Field Effect Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 248.43 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| K2711 | ROHM | 2SK2711 |
| K2715 | ROHM | 2SK2715 |