K2717 Datasheet, transistor equivalent, Toshiba

PDF File Details

Part number: K2717

Manufacturer: Toshiba (https://www.toshiba.com/)

File Size: 248.43KB

Download: 📄 Datasheet

Description: Silicon N Channel MOS Type Field Effect Transistor

Datasheet Preview: K2717 📥 Download PDF (248.43KB)

K2717 Application

Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 .

Image gallery

Page 2 of K2717 Page 3 of K2717

TAGS

K2717
Silicon
Channel
MOS
Type
Field
Effect
Transistor
Toshiba

📁 Related Datasheet

K2711 - 2SK2711 (Rohm)
www.DataSheet.co.kr Transistors Switching (250V, 16A) 2SK2711 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating a.

K2715 - 2SK2715 (Rohm)
Transistors Switching (500V, 2A) 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source v.

K2718 - 2SK2718 (Toshiba Semiconductor)
2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source.

K2719 - N-Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications.

K270 - Silicon Zener Diodes (Aeroflex)
Silicon Zener Diodes Glass Axial Leaded Low Level, Very Low Voltage, Low Leakage Model K120 K150 K180 K210 K240 K270 K300 K330 K360 K390 K430 K470 .

K270 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.

K2700 - 2SK2700 (Toshiba Semiconductor)
2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII) 2SK2700 Chopper Regulator, DC–DC Converter and Motor Drive Applications.

K2708 - 2SK2708 (Sanken)
2SK2708 External dimensions 1 ...... FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 600 V VGSS ±30 V ID *ID (pulse) 1 ±.

K2723 - 2SK2723 (NEC)
DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3.

K2725 - 2SK2725 (Renesas Technology)
2SK2725 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary br.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts