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K2717 Datasheet - Toshiba

K2717 Silicon N Channel MOS Type Field Effect Transistor

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2717 DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain

K2717_Toshiba.pdf

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Datasheet Details

Part number:

K2717

Manufacturer:

Toshiba ↗

File Size:

248.43 KB

Description:

Silicon n channel mos type field effect transistor.

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K2717 K2717 Silicon Channel MOS Type Field Effect Transistor Toshiba