K2717 Datasheet (Toshiba) - Silicon N Channel MOS Type Field Effect Transistor

K2717, Silicon N Channel MOS Type Field Effect Transistor

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2717 DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain