K3878
K3878 is N-Channel MOSFET manufactured by Toshiba.
2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
- High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
±30
9 A
778 m J
15 m J
°C
- 55 to...
Representative K3878 image (package may vary by manufacturer)
