K80E07NE Datasheet (Toshiba)

K80E07NE, TK80E07NE

TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market.

z Low drain source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltag