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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK880
2SK880
Audio Frequency Low Noise Amplifier Applications
· High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ · High input impedance: IGSS = −1 nA (max) at VGS = −30 V · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-50 10 100 125 -55~125
Unit
V mA mW °C °C
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.
K880 Datasheet
