TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 2SK880 Audio Frequency Low Noise Amplifier Applications High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = 50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ High input impedance: IGSS = 1 nA (max) at VGS = 30 V Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate curre.
