MG75J2YS50 Datasheet (Toshiba)

MG75J2YS50, N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case.

l High input impedance.

l Includes a complete half bridge in one package.

l Enhancement-mode.

l High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Equivalent Circuit MG75J2YS50 Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate