Datasheet Specifications
- Part number
- MG75J2YS50
- Manufacturer
- Toshiba ↗
- File Size
- 223.84 KB
- Datasheet
- MG75J2YS50_ToshibaSemiconductor.pdf
- Description
- N-Channel IGBT
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from c.
Applications
* Motor Control Applications l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode. l High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) EquiMG75J2YS50 Distributors
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