MG75J2YS50 Datasheet - Toshiba

MG75J2YS50 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode. l High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Equivalent Circuit MG75J2YS50 Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate.

MG75J2YS50_ToshibaSemiconductor.pdf