RN1508 Datasheet | Toshiba

RN1507 to RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1507, RN1508, RN1509 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm - Including two devices in SMV (super mini type with 5 leads) - With built-in bias resistors. - Simplify circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. - Various resistance values are available to suit various circuit designs - plementary to RN2507 to RN2509 Equivalent Circuit and Bias Resistor Values Part No. RN1507 RN1508 RN1509 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Internal Circuit (Top View) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1507 RN1508 RN1509 VCBO VCEO VEBO IC PC - Tj Tstg 100 m...