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RN1908FE - Silicon NPN Epitaxial Type Transistors

Download the RN1908FE datasheet PDF. This datasheet also covers the RN1907FE variant, as both devices belong to the same silicon npn epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN2907FE to RN2909FE 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1907FE RN1908FE RN1909FE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 20.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RN1907FE-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN1908FE
Manufacturer Toshiba
File Size 516.18 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1908FE Datasheet

Full PDF Text Transcription for RN1908FE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RN1908FE. For precise diagrams, and layout, please refer to the original PDF.

RN1907FE to RN1909FE Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1907FE/08FE/09FE 1. Applications • Switching • Inve...

View more extracted text
t-in Transistor) RN1907FE/08FE/09FE 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN2907FE to RN2909FE 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1907FE RN1908FE RN1909FE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 2021-08-18

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