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S1732 - NPN Transistor

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    S1732 ; 2 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. TV HORIZONTAL DRIVER APPLICATIONS. Unit in mm <19MAX. ,' ^J 3.2 ±;0. M aM H n -1 r 00 c w MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Pov/er Dissipation Ta=25 C Tc=25 C Junction Temperature Storage Temperature Range SYMBOL 'CBO 'CEO 'EBO ic IB stg RATING 200 120 800 500 1.5 6.25 150 -55-150 UNIT mA mA _ i 1.2 n !zi j I a 0.66 2.54 U 3 2.54 ^H ci.8 Tl 2_3< ~ c.-.*ntn ~aco —mt.ii X i T ' 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK) TOSHIBA 2-10P1A Weight : 1 .
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