Datasheet4U Logo Datasheet4U.com

ST1000GXH35 - Silicon N-Channel IEGT

Features

  • (1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST1000GXH35 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-02 2024-03-19 Rev.1.0 ST1000GXH35 4. Absolute Maximum Ratings (Note) (Tc = 25.
  • , unless otherwise specified) Characteristics Symbol Note Test Condition Rating Unit Collector-emitter voltage VCES 4500 V Gate-emitter voltage VGES ±20 V Collector c.

📥 Download Datasheet

Datasheet preview – ST1000GXH35

📁 Similar Datasheet

  • ST1000-30T3MI - Wet Tantalum Capacitors (Vishay)
  • ST1000C - (ST1000C-K Series) PHASE CONTROL THYRISTORS (International Rectifier)
  • ST1000C12K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000C16K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000C18K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000C20K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000C22K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000C24K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000C26K - (ST1000CxxK) Phase Control Thyristors (Vishay Siliconix)
  • ST1000K - (ST1000C-K Series) PHASE CONTROL THYRISTORS (International Rectifier)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Press Pack IEGT Silicon N-Channel IEGT ST1000GXH35 1. Applications • Electric power transmission and distribution • Motor Controllers • High-Power Switching 2. Features (1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST1000GXH35 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-02 2024-03-19 Rev.1.0 ST1000GXH35 4.
Published: |