ST1000GXH35 - Silicon N-Channel IEGT

Product Overview

Toshiba

Part number	ST1000GXH35
Manufacturer	Toshiba
File Size	614.18 KB
Description	Silicon N-Channel IEGT
Datasheet	ST1000GXH35 Datasheet
Additional preview pages of the ST1000GXH35 datasheet.

(1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST1000GXH35 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-02 2024-03-19 Rev.1.0 ST1000GXH35 4. Absolute Maximum Ratings (Note) (Tc = 25.
, unless otherwise specified) Characteristics Symbol Note Test Condition Rating Unit Collector-emitter voltage VCES 4500 V Gate-emitter voltage VGES ±20 V Collector c.

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Published: Apr 29, 2024 |