TC55B329J-12 Datasheet, Ram, Toshiba

TC55B329J-12 Features

• Ram low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high

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TC55B329J-12

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Toshiba ↗

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📄 Datasheet

Description:

32k x 9-bit bicmos static ram. The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from

TC55B329J-12 Application

• Applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B329P/J is available in a 300mil width,

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TC55B329J-12

Toshiba

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