TC75S51FE Datasheet | Toshiba

Features - Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V - Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.) - Built-in phase-pensated op-amp, obviating the need for any external device - Ultra-pact package SON5-P-0.50 (ESV) Weight SON5-P-0.50 : 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage Differential input voltage Input voltage Power dissipation Operating temperature Storage temperature VDD, VSS DVIN ±7 VDD to VSS 100 m W Topr - 40 to 85 °C Tstg - 55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). © 2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 1993-07 2019-09-11 Marking (top view) Pin Connection (top view) VDD 5 OUT...