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TGM9398-25 MICROWAVE POWER GaN AMPLIFIER

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Description

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Features

* ・BROAD BAND 2-STAGE AMPLIFIER ・HIGH POWER Pout= 44.0dBm at Pin= 23.0dBm ・HIGH GAIN GL= 24dB(Typ) at Pin= 7dBm ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaN AMPLIFIER TGM9398-25 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear G

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