TJ11A10M3 Datasheet, Mos, Toshiba

TJ11A10M3 Features

• Mos (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -

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Part number:

TJ11A10M3

Manufacturer:

Toshiba ↗

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260.34kb

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📄 Datasheet

Description:

Mosfets silicon p-channel mos.

TJ11A10M3 Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) L

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TJ11A10M3

Toshiba

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