Part number:
TJ11A10M3
Manufacturer:
File Size:
260.34 KB
Description:
Mosfets silicon p-channel mos.
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ra
TJ11A10M3 Datasheet (260.34 KB)
TJ11A10M3
260.34 KB
Mosfets silicon p-channel mos.
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