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TJ11A10M3 Datasheet - Toshiba

TJ11A10M3 MOSFETs Silicon P-Channel MOS

TJ11A10M3 Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ra

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Datasheet Details

Part number:

TJ11A10M3

Manufacturer:

Toshiba ↗

File Size:

260.34 KB

Description:

Mosfets silicon p-channel mos.

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