TJ11A10M3 - MOSFETs Silicon P-Channel MOS

Toshiba

Datasheet Details

Part number	TJ11A10M3
Manufacturer	Toshiba ↗
File Size	260.34 KB
Description	MOSFETs Silicon P-Channel MOS
Datasheet	TJ11A10M3_Toshiba.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Av.

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Published: Nov 11, 2013 |