TJ80S04M3L Datasheet - Toshiba

TJ80S04M3L, Silicon P-Channel MOSFET

TJ80S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ80S04M3L 1.Applications * * * * Automotive Motor Drivers DC-DC C.

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maxi

TJ80S04M3L_Toshiba.pdf