* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maxi
TJ80S04M3L Datasheet (264.21 KB)
TJ80S04M3L
264.21 KB
Silicon p-channel mosfet.
TJ80S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ80S04M3L
1. Applications
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* Automotive Motor Drivers DC-DC C.
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