* Vee tAee 1eC2 lee 1 -15 150ns I 5V±5% I 100mA 30mA '- -20 200ns
* Wide operating temparature range -40-85°C
* Full static operation
* High speed programming mode
* Inputs and outp
TMM27256ADI Datasheet (306.51 KB)
TMM27256ADI
306.51 KB
N-mos uv erasable and electrically programmable read only memory.
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT N
*MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
SILICON STACKED GATE MOS
TMM2725.
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SILICON STACKED GATE MOS
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