TMM27512D-25 - N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27512D-25 Features
* -200 -250 I !5V±10% ~~
* ~
* -r
* ~-2-0-0
* ns I 250ns I 35mA 130mA 40mA reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. For program