* -200 -250 I !5V±10% ~~
* ~
* -r
* ~-2-0-0
* ns I 250ns I 35mA 130mA 40mA reduces power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. For program
TMM27512D-25 Datasheet (329.95 KB)
TMM27512D-25
329.95 KB
N-mos uv erasable and electrically programmable read only memory.
TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 8 BIT N-MOS UV ERASABLE AND EL- TMM27512D-20,TMM27512D-200
ECTRICALLY PROGRAMMABLE READ ONLY MEMORY
PRELIMI.
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