TPCA8065-H - Field Effect Transistor
TPCA8065-H Features
* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 4.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11.7 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS =
