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TPCA8065-H Field Effect Transistor

TPCA8065-H Description

TPCA8065-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8065-H 1.Applications * * * High-Efficiency DC-DC Converters Noteboo.

TPCA8065-H Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 4.3 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 11.7 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS =

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Field Effect Transistor Toshiba
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