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TW015N120C Datasheet - Toshiba

TW015N120C Silicon N-channel MOSFET

TW015N120C Features

* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0

TW015N120C-Toshiba.pdf

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Datasheet Details

Part number:

TW015N120C

Manufacturer:

Toshiba ↗

File Size:

521.73 KB

Description:

Silicon n-channel mosfet.

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TW015N120C TW015N120C Silicon N-channel MOSFET Toshiba

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