Datasheet Specifications
- Part number
- TW015N120C
- Manufacturer
- Toshiba ↗
- File Size
- 521.73 KB
- Datasheet
- TW015N120C-Toshiba.pdf
- Description
- Silicon N-channel MOSFET
Description
MOSFETs Silicon Carbide N-Channel MOS TW015N120C TW015N120C 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0TW015N120C Distributors
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