Datasheet4U Logo Datasheet4U.com

TW015N65C Datasheet - Toshiba

TW015N65C Silicon Carbide N-Channel MOSFET

TW015N65C Features

* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V

TW015N65C-Toshiba.pdf

Preview of TW015N65C PDF
TW015N65C Datasheet Preview Page 2 TW015N65C Datasheet Preview Page 3

Datasheet Details

Part number:

TW015N65C

Manufacturer:

Toshiba ↗

File Size:

517.08 KB

Description:

Silicon carbide n-channel mosfet.

📁 Related Datasheet

TW015N120C Silicon N-channel MOSFET (Toshiba)

TW015Z120C Silicon Carbide N-Channel MOSFET (Toshiba)

TW015Z65C Silicon Carbide N-Channel MOSFET (Toshiba)

TW027N65C Silicon N-channel MOSFET (Toshiba)

TW045N120C Silicon N-channel MOSFET (Toshiba)

TW048N65C Silicon N-channel MOSFET (Toshiba)

TW050LH9CTLCM Display Module (TOPWIN)

TW-0x-xx-F-D-xxx-SM (TW Series) SMT BOARD STACKERS (Samtec)

TAGS

TW015N65C TW015N65C Silicon Carbide N-Channel MOSFET Toshiba

TW015N65C Distributor