XK1R9F10QB - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.6 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit XK1R9F10QB TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2019-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-01 2023-05-22 Rev.4.0 XK1R9F10QB 4. Absolute Maximum Ratings (Note) (Ta = 25.

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Published: Dec 13, 2023 |