XK1R9F10QB Silicon N-channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS *-H) XK1R9F10QB 1.Applications * Automotive * Switching Voltage Regulators * DC-DC Co.

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Datasheet Specifications

Part number: XK1R9F10QB
Manufacturer: Toshiba ↗
File Size: 661.44 KB
Datasheet: XK1R9F10QB-Toshiba.pdf
Description: Silicon N-channel MOSFET

Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.6 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit XK1R9F10QB TO-220SM(W) 1: Gate 2: Drain (Hea

Applications

* Automotive
* Switching Voltage Regulators
* DC-DC Converters

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XK1R9F10QB Silicon N-channel MOSFET Toshiba

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